PART |
Description |
Maker |
M27V160-100K1 |
16 MBIT (2MB X8 OR 1MB X16) LOW VOLTAGE UV EPROM AND OTP EPROM
|
ST Microelectronics
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M27C32206 M27C322 M27C322-80F3 M27C322-80F1 M27C32 |
32 Mbit (2Mb x16) UV EPROM and OTP EPROM
|
STMicroelectronics
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M27W032 M27W032-110N1T M27W032-110M1T M27W032-100M |
32 Mbit 2Mb x16 3V Supply FlexibleROM Memory 32 Mbit 2Mb x16 3V Supply FlexibleROM?/a> Memory 32 Mbit 2Mb x16 3V Supply FlexibleROMMemory 32兆位Mb x16 3V电源FlexibleROM⑩记
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STMicroelectronics N.V. 意法半导
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M36DR432AD M36DR432AD10ZA6T M36DR432AD12ZA6T M36DR |
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product
|
STMICROELECTRONICS[STMicroelectronics]
|
M36DR232A M36DR232BZA M36DR232AZA |
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 2 Mbit 128K x16 SRAM, Multiple Memory Product 32兆位Mb x16插槽,双行,页闪存和2兆位128K的x16的SRAM,多个存储产
|
STMicroelectronics N.V. http://
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M36W0R7050B0 M36W0R7050B0ZAQ M36W0R7050T0 M36W0R70 |
SPECIALTY MEMORY CIRCUIT, PBGA88 128 Mbit (8Mb x16, Multiple Bank, Burst) Flash Memory and 32 Mbit (2Mb x16) PSRAM, 1.8V Supply Multi-Chip Package
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STMICROELECTRONICS ST Microelectronics
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M59DR032A M59DR032B M59DR032A120ZB1T M59DR032A100Z |
2M X 16 FLASH 1.8V PROM, 120 ns, PBGA48 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory 32兆位Mb x16插槽,双行,第低压闪 32 Mbit 2Mb x16 / Dual Bank / Page Low Voltage Flash Memory 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory
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http:// NUMONYX STMicroelectronics N.V. 意法半导 ST Microelectronics
|
M27V400 M27V400-100B1TR M27V400-100B6TR M27V400-10 |
NND - 4 MBIT (512KB X8 OR 256KB X16) UV EPROM AND OTP EPROM 4 Mbit 512Kb x8 or 256Kb x16 UV EPROM and OTP EPROM 4兆位512KB的x856Kb的x16紫外线存储器和OTP存储
|
SGS Thomson Microelectronics STMicroelectronics N.V. 意法半导 ST Microelectronics
|
M27W202 M27W202-100B6TR M27W202-100F6TR M27W202-10 |
2 Mbit 128Kb x16 Low Voltage UV EPROM and OTP EPROM 2兆位128KB的x16低压紫外线可擦写可编程只读存储器和OTP存储 3-Line To 8-Line Decoders/Demultiplexers 16-SOIC 0 to 70 Triple 3-Input Positive-AND Gates 14-SO 0 to 70 2 Mbit 256Kb x 8 Low Voltage UV EPROM and OTP EPROM
|
STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
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M36W832TE8 M36W832TE M36W832BE70ZA6T M36W832BE70ZA |
32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product 32 Mbit 2Mb x16 Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM Multiple Memory Product
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STMICROELECTRONICS[STMicroelectronics]
|
4376 M27V401 M27V401-200B1TR M27V401-200B6TR M27V4 |
4 Mbit 512Kb x8 Low Voltage UV EPROM and OTP EPROM 4兆位512KB的x8低压紫外线EPROM和检察官办公室存储器 2.5-V/3.3-V 16-Bit Bus Transceiver With 3-State Outputs 56-BGA MICROSTAR JUNIOR -40 to 85 4兆位512KB的x8低压紫外线EPROM和检察官办公室存储器 2.5-V/3.3-V 32-Bit Buffers/Drivers With 3-State outputs 96-LFBGA -40 to 85 Quadruple 2-Input Positive-NAND Gates 14-SOIC 0 to 70 2.5-V/3.3-V 16-Bit Bus Transceiver With 3-State Outputs 48-TSSOP -40 to 85 4 Mbit (512Kb x8) Low Voltage UV EPROM and OTP EPROM From old datasheet system 4 Mbit 512Kb x8 or 256Kb x16 UV EPROM and OTP EPROM
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STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
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